Parameters taken from Vogl, Hjalmarson and Dow, A Semiempirical Tight-Binding Theory of the Electronic Structure of Semiconductors, J. Phys. Chem. Sol. 44 (5), pp 365-378 (1983).
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%matplotlib inline
import numpy as np
import matplotlib.pyplot as plt
from numpy.linalg import eigvalsh
from collections import namedtuple
import TB
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TB.band(TB.Si)
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TB.band(TB.GaAs)
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TB.band(TB.Ge)
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def SiGe_band(x=0.2):
Si_data = TB.bandpts(TB.Si)
Ge_data = TB.bandpts(TB.Ge)
data = (1-x)*Si_data + x*Ge_data
TB.bandplt("SiGe, %%Ge=%.2f" % x,data)
return
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SiGe_band(0)
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SiGe_band(0.1)
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SiGe_band(0.25)
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SiGe_band(0.37)
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Ge_CB = TB.bandpts(TB.Ge)[:,4]
Si_CB = TB.bandpts(TB.Si)[:,4]
nk = len(Si_CB)
n = (nk-2)//3
plt.plot(Si_CB)
plt.plot(Ge_CB)
TB.band_labels(n)
plt.axis(xmax=3*n+1)
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plt.plot(Si_CB,label='Si')
plt.plot(Ge_CB,label='Ge')
plt.plot(0.9*Si_CB + 0.1*Ge_CB,label='Si_0.9 Ge_0.1')
TB.band_labels(n)
plt.axis(xmax=3*n+1)
plt.legend(bbox_to_anchor=(1.05, 1), loc=2, borderaxespad=0.)
Out[13]:
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min_Si = min(Si_CB)
min_Ge = min(Ge_CB)
print min_Si, min_Ge
# min_Si - min_Ge = 0.12
Si_CB_shifted = Si_CB - min_Si + min_Ge + 0.12
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